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Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-4600C19-8GTZKKC 8GB

Peak Electronics 256X64M-67E 2GB vs G Skill Intl F4-4600C19-8GTZKKC 8GB

总分
star star star star star
Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

总分
star star star star star
G Skill Intl F4-4600C19-8GTZKKC 8GB

G Skill Intl F4-4600C19-8GTZKKC 8GB

差异 规格 评论

差异

Peak Electronics 256X64M-67E 2GB 需要考虑的原因
Peak Electronics 256X64M-67E 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 21.2
    测试中的平均数值
G Skill Intl F4-4600C19-8GTZKKC 8GB 需要考虑的原因
G Skill Intl F4-4600C19-8GTZKKC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    17 left arrow 39
    左右 -129% 更低的延时
  • 更快的写入速度，GB/s
    17.2 left arrow 1,597.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-4600C19-8GTZKKC 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 17
  • 读取速度，GB/s
    5,022.9 left arrow 21.2
  • 写入速度，GB/s
    1,597.0 left arrow 17.2
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    753 left arrow 3714

Peak Electronics 256X64M-67E 2GB RAM的比较

A Force Manufacturing Ltd. 256X64M-67E 2GB
Kingston ACR26D4U9S8MH-8 8GB

G Skill Intl F4-4600C19-8GTZKKC 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Mushkin 99[2/7/4]199[F/T] 8GB
Mushkin 99[2/7/4]199[F/T] 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMN32GX4M2Z3600C16 16GB
Corsair CMN32GX4M2Z3600C16 16GB
内存RAM
SK Hynix HYMP164U64CP6-Y5 512MB
SK Hynix HYMP164U64CP6-Y5 512MB
Patriot Memory (PDP Systems) 2133 C14 Series 8GB
Patriot Memory (PDP Systems) 2133 C14 Series 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Kingston 9965596-029.B00G 4GB
Kingston 9965596-029.B00G 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Transcend Information TS2GLH64V1B 16GB
Transcend Information TS2GLH64V1B 16GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
Crucial Technology CT16G4DFD8266.M16FR 16GB
Crucial Technology CT16G4DFD8266.M16FR 16GB
内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB
内存RAM
SK Hynix HMA41GU7AFR8N-TF 8GB
SK Hynix HMA41GU7AFR8N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
内存RAM
Kingston 9905471-001.A01LF 2GB
Kingston 9905471-001.A01LF 2GB
Transcend Information JM3200HLB-16GK 8GB
Transcend Information JM3200HLB-16GK 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Kingston KV0M5R-HYD 8GB
Kingston KV0M5R-HYD 8GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Kingston X75V1H-MIE 32GB
Kingston X75V1H-MIE 32GB
内存RAM
A-DATA Technology DQVE1B16 2GB
A-DATA Technology DQVE1B16 2GB
G Skill Intl F4-2400C17-16GSXF 16GB
G Skill Intl F4-2400C17-16GSXF 16GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
SK Hynix HMA851U6CJR6N-UH 4GB
SK Hynix HMA851U6CJR6N-UH 4GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Crucial Technology CT8G4DFD824A.C16FE 8GB
Crucial Technology CT8G4DFD824A.C16FE 8GB
内存RAM