PNY Electronics PNY 2GB vs Crucial Technology CT16G4SFD8213.C16FBR 16GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Crucial Technology CT16G4SFD8213.C16FBR 16GB

Crucial Technology CT16G4SFD8213.C16FBR 16GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 38

左右 29% 更低的延时
更快的读取速度，GB/s

13.8 13.4

测试中的平均数值

Crucial Technology CT16G4SFD8213.C16FBR 16GB

需要考虑的原因
Crucial Technology CT16G4SFD8213.C16FBR 16GB

报告一个错误

更快的写入速度，GB/s

10.0 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Crucial Technology CT16G4SFD8213.C16FBR 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 38
读取速度，GB/s

13.8 13.4
写入速度，GB/s

8.4 10.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 2439

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2666C18-4GFX 4GB

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Samsung M391B5673FH0-CH9 2GB

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A-DATA Technology AO2P32NC8W1-BD3SHC 8GB

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Kingston 9905403-444.A00LF 4GB

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Patriot Memory (PDP Systems) 2400 C17 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Avant Technology W6451U66J7240ND 4GB

Avant Technology W6451U66J7240ND 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Apacer Technology GD2.1542WS.001 8GB

Apacer Technology GD2.1542WS.001 8GB

SK Hynix HMAA4GS6MJR8N-VK 32GB

SK Hynix HMAA4GS6MJR8N-VK 32GB

SK Hynix HMAA4GS6CJR8N-XN 32GB

SK Hynix HMAA4GS6CJR8N-XN 32GB

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Corsair CMV4GX3M1B1600C11 4GB

Crucial Technology CT16G4SFD832A.C16FP 16GB

Crucial Technology CT16G4SFD832A.C16FP 16GB