Samsung 1600 CL10 Series 8GB vs Mushkin MRA4S266GHHF32G 32GB

总分

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

总分

Mushkin MRA4S266GHHF32G 32GB

Mushkin MRA4S266GHHF32G 32GB

差异规格评论

差异

Samsung 1600 CL10 Series 8GB

需要考虑的原因
Samsung 1600 CL10 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 35

左右 29% 更低的延时

Mushkin MRA4S266GHHF32G 32GB

需要考虑的原因
Mushkin MRA4S266GHHF32G 32GB

报告一个错误

更快的读取速度，GB/s

16.9 16.1

测试中的平均数值
更快的写入速度，GB/s

14.6 10.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung 1600 CL10 Series 8GB

Mushkin MRA4S266GHHF32G 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 35
读取速度，GB/s

16.1 16.9
写入速度，GB/s

10.1 14.6
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2764 3228

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Kingston ACR256X64D3S1333C9 2GB

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SK Hynix HMA851U6DJR6N-XN 4GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Panram International Corporation PUD42133C154G2VS 4GB

Panram International Corporation PUD42133C154G2VS 4GB

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G Skill Intl F5-6400J3239G16G 16GB

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Thermaltake Technology Co Ltd R009D408GX2-4000C19A 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Kingston 9965589-006.E00G 8GB

Kingston 9965589-006.E00G 8GB