Samsung DDR3 8GB 1600MHz 8GB vs Crucial Technology CT16G4SFS8266.C8FB 16GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Crucial Technology CT16G4SFS8266.C8FB 16GB

Crucial Technology CT16G4SFS8266.C8FB 16GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

更快的读取速度，GB/s

14.9 14.8

测试中的平均数值

Crucial Technology CT16G4SFS8266.C8FB 16GB

需要考虑的原因
Crucial Technology CT16G4SFS8266.C8FB 16GB

报告一个错误

低于PassMark测试中的延时，ns

39 43

左右 -10% 更低的延时
更快的写入速度，GB/s

10.4 9.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology CT16G4SFS8266.C8FB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 39
读取速度，GB/s

14.9 14.8
写入速度，GB/s

9.6 10.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2506 2571

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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SK Hynix HMA81GU6AFR8N-UH 8GB

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Ramaxel Technology RMUA5120MB86H9F2400 4GB

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A-DATA Technology DDR4 3600 2OZ 8GB

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Kingston ACR16D3LS1NGG/2G 2GB

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G Skill Intl F4-4000C18-8GTZKK 8GB

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Panram International Corporation M424016 4GB

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Kingston 99U5474-010.A00LF 2GB

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Hewlett-Packard 7TE39AA#ABC 8GB

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Kingston 99U5584-001.A00LF 4GB

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Kingston 9905643-009.A00G 8GB

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

Kingston KHX3200C16D4/16GX 16GB

Kingston KHX3200C16D4/16GX 16GB

SK Hynix HMT425S6AFR6A-PB 2GB

SK Hynix HMT425S6AFR6A-PB 2GB

Patriot Memory (PDP Systems) 3400 C16 Series 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 4ATF1G64HZ-3G2B2 8GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB