Samsung DDR3 8GB 1600MHz 8GB vs Kingston ACR26D4U9D8ME-16 16GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

Kingston ACR26D4U9D8ME-16 16GB

Kingston ACR26D4U9D8ME-16 16GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

Kingston ACR26D4U9D8ME-16 16GB

需要考虑的原因
Kingston ACR26D4U9D8ME-16 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 43

左右 -48% 更低的延时
更快的读取速度，GB/s

16.6 14.9

测试中的平均数值
更快的写入速度，GB/s

12.5 9.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

Kingston ACR26D4U9D8ME-16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 29
读取速度，GB/s

14.9 16.6
写入速度，GB/s

9.6 12.5
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2506 3323

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

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Micron Technology 16ATF2G64AZ-2G6H1 16GB

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Corsair CMD16GX3M4A2666C11 4GB

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Kingston 9905403-011.A03LF 2GB

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Crucial Technology CT102464BD160B.M16 8GB

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SK Hynix HMA82GU6MFR8N-TF 16GB

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Kingston KHX2400C11D3/4GX 4GB

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Essencore Limited KD48GU881-26N190D 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Kingston 9905703-011.A00G 16GB

Kingston KP4T2F-PSB 4GB

Kingston KP4T2F-PSB 4GB

Corsair CMK16GX4M2G4000C16 8GB

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Corsair CMD16GX3M2A1866C9 8GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

Corsair CMW64GX4M4Z2933C16 16GB

Corsair CMW64GX4M4Z2933C16 16GB