Samsung DDR3 8GB 1600MHz 8GB vs SK Hynix HMA81GR7MFR8N-UH 8GB

总分

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

总分

SK Hynix HMA81GR7MFR8N-UH 8GB

SK Hynix HMA81GR7MFR8N-UH 8GB

差异规格评论

差异

Samsung DDR3 8GB 1600MHz 8GB

需要考虑的原因
Samsung DDR3 8GB 1600MHz 8GB

报告一个错误

低于PassMark测试中的延时，ns

43 56

左右 23% 更低的延时
更快的读取速度，GB/s

14.9 9.5

测试中的平均数值
更快的写入速度，GB/s

9.6 7.2

测试中的平均数值

SK Hynix HMA81GR7MFR8N-UH 8GB

需要考虑的原因
SK Hynix HMA81GR7MFR8N-UH 8GB

报告一个错误

更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung DDR3 8GB 1600MHz 8GB

SK Hynix HMA81GR7MFR8N-UH 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

43 56
读取速度，GB/s

14.9 9.5
写入速度，GB/s

9.6 7.2
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2506 2138

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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最新比较

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Kingston KHX2133C14D4/8G 8GB

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G Skill Intl F4-3200C14-16GTRG 16GB

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Corsair CMSX16GX4M1A2666C18 16GB

Corsair CMSX16GX4M1A2666C18 16GB

Samsung M471A2K43BB1-CTD 16GB

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G Skill Intl F3-2666C12-8GTXD 8GB

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Micron Technology 16ATF2G64HZ-2G6E1 16GB

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Kingston KVR16N11/8-SP 8GB

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Kingston ACR32D4U2S8ME-16 16GB

Kingston ACR32D4U2S8ME-16 16GB

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Kingston 99U5584-001.A00LF 4GB

Corsair CMK16GX4M2B3600C18 8GB

Corsair CMK16GX4M2B3600C18 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston 9965600-005.A01G 16GB

Kingston 9965600-005.A01G 16GB

Crucial Technology BL16G32C16U4B.16FE 16GB

Crucial Technology BL16G32C16U4B.16FE 16GB

Golden Empire CL16-16-16 D4-2800 8GB

Golden Empire CL16-16-16 D4-2800 8GB

A-DATA Technology DDR4 2400 16GB

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Kingston ASU21D4U5S1MB-4 4GB

Kingston ASU21D4U5S1MB-4 4GB