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Samsung M2S4G64CB8HD5N-CG 4GB
G Skill Intl F5-6000J3636F16G 16GB

Samsung M2S4G64CB8HD5N-CG 4GB vs G Skill Intl F5-6000J3636F16G 16GB

总分
star star star star star
Samsung M2S4G64CB8HD5N-CG 4GB

Samsung M2S4G64CB8HD5N-CG 4GB

总分
star star star star star
G Skill Intl F5-6000J3636F16G 16GB

G Skill Intl F5-6000J3636F16G 16GB

差异 规格 评论

差异

Samsung M2S4G64CB8HD5N-CG 4GB 需要考虑的原因
Samsung M2S4G64CB8HD5N-CG 4GB
报告一个错误
G Skill Intl F5-6000J3636F16G 16GB 需要考虑的原因
G Skill Intl F5-6000J3636F16G 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 42
    左右 -91% 更低的延时
  • 更快的读取速度，GB/s
    14.4 left arrow 7.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.4 left arrow 6.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Samsung M2S4G64CB8HD5N-CG 4GB
G Skill Intl F5-6000J3636F16G 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR5
  • PassMark中的延时，ns
    42 left arrow 22
  • 读取速度，GB/s
    7.6 left arrow 14.4
  • 写入速度，GB/s
    6.2 left arrow 13.4
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC5-19200, 1.1V, CAS Supported: 22 28 30 32 36 40 42
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow no data / 2400 MHz
  • 排名PassMark (越多越好)
    1160 left arrow 3671

Samsung M2S4G64CB8HD5N-CG 4GB RAM的比较

Samsung M378A2K43EB1-CWE 16GB

G Skill Intl F5-6000J3636F16G 16GB RAM的比较

Apacer Technology 76.D105G.D090B 16GB
Kingston 9905783-025.A01G 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M2S4G64CB8HD5N-CG 4GB
Samsung M2S4G64CB8HD5N-CG 4GB
G Skill Intl F5-6000J3636F16G 16GB
G Skill Intl F5-6000J3636F16G 16GB
内存RAM
Mushkin 991586 2GB
Mushkin 991586 2GB
G Skill Intl F4-4800C18-8GTRS 8GB
G Skill Intl F4-4800C18-8GTRS 8GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
G Skill Intl F4-2133C15-16GFT 16GB
G Skill Intl F4-2133C15-16GFT 16GB
内存RAM
G Skill Intl F3-14900CL9-4GBSR 4GB
G Skill Intl F3-14900CL9-4GBSR 4GB
Corsair CM4X8GF2400Z16K4 8GB
Corsair CM4X8GF2400Z16K4 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
G Skill Intl F4-3200C14-16GTZN 16GB
G Skill Intl F4-3200C14-16GTZN 16GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
G Skill Intl F4-3600C19-8GSXK 8GB
G Skill Intl F4-3600C19-8GSXK 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
V-GEN D4S4GL32A16TS 4GB
V-GEN D4S4GL32A16TS 4GB
内存RAM
Kingston 9905702-010.A00G 8GB
Kingston 9905702-010.A00G 8GB
G Skill Intl F4-3200C16-4GTZB 4GB
G Skill Intl F4-3200C16-4GTZB 4GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
G Skill Intl F4-3200C14-16GTRG 16GB
G Skill Intl F4-3200C14-16GTRG 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-2800C15-8GRBB 8GB
G Skill Intl F4-2800C15-8GRBB 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston KHX3600C17D4/8GX 8GB
Kingston KHX3600C17D4/8GX 8GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Corsair CMW16GX4M1Z3200C16 16GB
Corsair CMW16GX4M1Z3200C16 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4400C16-8GVK 8GB
G Skill Intl F4-4400C16-8GVK 8GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB
内存RAM