Samsung M3 78T2863EHS-CF7 1GB vs Corsair CM4X16GD3200C16K4E 16GB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Corsair CM4X16GD3200C16K4E 16GB

Corsair CM4X16GD3200C16K4E 16GB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 16.6

测试中的平均数值
更快的写入速度，GB/s

2,123.3 15.2

测试中的平均数值

Corsair CM4X16GD3200C16K4E 16GB

需要考虑的原因
Corsair CM4X16GD3200C16K4E 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 59

左右 -103% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Corsair CM4X16GD3200C16K4E 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 29
读取速度，GB/s

4,833.8 16.6
写入速度，GB/s

2,123.3 15.2
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

731 3629

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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最新比较

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Kingston KHX2933C17D4/16G 16GB

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Kingston 9965525-018.A00LF 4GB

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Crucial Technology BLS8G4D240FSB.16FAR 8GB

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Kingston ACR256X64D3S1333C9 2GB

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Samsung M393B1G70BH0-YK0 8GB

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Team Group Inc. TEAMGROUP-UD4-2666 8GB

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Chun Well Technology Holding Limited D4U0826190B 8GB

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Transcend Information JM2400HSB-8G 8GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Essencore Limited KD48GS88C-32N2200 8GB

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Samsung M3 78T5663EH3-CF7 2GB

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Samsung M378T5663DZ3-CF7 2GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Kingston MSI24D4S7D8MHMH6 16GB

Kingston MSI24D4S7D8MHMH6 16GB

Kingston KHX1600C9S3L/8G 8GB

Kingston KHX1600C9S3L/8G 8GB

Crucial Technology CT16G4SFS832A.M8FE 16GB

Crucial Technology CT16G4SFS832A.M8FE 16GB

Corsair CMZ16GX3M2A1866C9 8GB

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Crucial Technology BLS8G4D240FSC.16FBD2 8GB

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AMD R5S38G1601U2S 8GB

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Dust Leopard DDR4-2400 CL17 8GB 8GB