Samsung M3 78T2863EHS-CF7 1GB vs Inmos + 256MB

总分

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

总分

Inmos + 256MB

Inmos + 256MB

差异规格评论

差异

Samsung M3 78T2863EHS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863EHS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 11.5

测试中的平均数值

Inmos + 256MB

需要考虑的原因
Inmos + 256MB

报告一个错误

低于PassMark测试中的延时，ns

30 59

左右 -97% 更低的延时
更快的写入速度，GB/s

9.1 2,123.3

测试中的平均数值
更高的内存带宽，mbps

16800 6400

左右 2.63 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863EHS-CF7 1GB

Inmos + 256MB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

59 30
读取速度，GB/s

4,833.8 11.5
写入速度，GB/s

2,123.3 9.1
内存带宽，mbps

6400 16800

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-16800, TBD1 V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 800 MHz no data
排名PassMark (越多越好)

731 2318

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Apacer Technology 78.CAGP7.AFW0C 8GB

Apacer Technology 78.CAGP7.AFW0C 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Corsair CM4X16GC3200C16K2E 16GB

Corsair CM4X16GC3200C16K2E 16GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A

Kingston 9905630-007.A00G 8GB

Kingston 9905630-007.A00G 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

G Skill Intl F4-3600C18-16GTZR 16GB

G Skill Intl F4-3600C18-16GTZR 16GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N

Kingston KF3200C18D4/8G 8GB

Kingston KF3200C18D4/8G 8GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F5-5600J4040C16G 16GB

G Skill Intl F3-2133C10-8GSR 8GB

G Skill Intl F3-2133C10-8GSR 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Kingston 99U5701-049.A00G 16GB

Kingston 99U5701-049.A00G 16GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-4000C17-16GVKB 16GB

G Skill Intl F4-4000C17-16GVKB 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

G Skill Intl F4-4800C19-8GTZRC 8GB

G Skill Intl F4-4800C19-8GTZRC 8GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

G Skill Intl F4-3200C16-8GSX 8GB

G Skill Intl F4-3200C16-8GSX 8GB

Crucial Technology CT102464BF160B-16F 8GB

Crucial Technology CT102464BF160B-16F 8GB

Patriot Memory (PDP Systems) 4266 C18 Series 8GB

Patriot Memory (PDP Systems) 4266 C18 Series 8GB

Kingston 9965516-112.A00LF 16GB

Kingston 9965516-112.A00LF 16GB

G Skill Intl F4-2133C15-4GRK 4GB

G Skill Intl F4-2133C15-4GRK 4GB