Samsung M3 78T2863QZS-CF7 1GB vs Patriot Memory (PDP Systems) 3866 C18 Series 8GB

总分

Samsung M3 78T2863QZS-CF7 1GB

Samsung M3 78T2863QZS-CF7 1GB

总分

Patriot Memory (PDP Systems) 3866 C18 Series 8GB

Patriot Memory (PDP Systems) 3866 C18 Series 8GB

差异规格评论

差异

Samsung M3 78T2863QZS-CF7 1GB

需要考虑的原因
Samsung M3 78T2863QZS-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 20.9

测试中的平均数值

Patriot Memory (PDP Systems) 3866 C18 Series 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 3866 C18 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 69

左右 -214% 更低的延时
更快的写入速度，GB/s

18.5 1,857.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2863QZS-CF7 1GB

Patriot Memory (PDP Systems) 3866 C18 Series 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 22
读取速度，GB/s

4,217.2 20.9
写入速度，GB/s

1,857.7 18.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

668 4324

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 18HTF12872AY-800F1 1GB

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Kllisre D4 8G 8GB

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PUSKILL DDR3 1600 8G 8GB

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Kingston 99U5712-009.A00G 16GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

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Kingston KHX2400C15S4/4G 4GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

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G Skill Intl F4-3600C16-16GTZNC 16GB

Kingston KHX1866C9D3/8GX 8GB

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G Skill Intl F4-4266C19-32GTZR 32GB

G Skill Intl F4-4266C19-32GTZR 32GB