Samsung M3 78T2953EZ3-CF7 1GB vs G Skill Intl F4-4000C19-8GTZ 8GB

总分

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分

G Skill Intl F4-4000C19-8GTZ 8GB

G Skill Intl F4-4000C19-8GTZ 8GB

差异规格评论

差异

Samsung M3 78T2953EZ3-CF7 1GB

需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 17.7

测试中的平均数值

G Skill Intl F4-4000C19-8GTZ 8GB

需要考虑的原因
G Skill Intl F4-4000C19-8GTZ 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 58

左右 -115% 更低的延时
更快的写入速度，GB/s

15.1 1,950.7

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2953EZ3-CF7 1GB

G Skill Intl F4-4000C19-8GTZ 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 27
读取速度，GB/s

4,241.0 17.7
写入速度，GB/s

1,950.7 15.1
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

651 3491

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Essencore Limited KD48GU880-36A180X 8GB

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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Corsair CM4X4GF3000C15K4 4GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

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Gold Key Technology Co Ltd NMSO416E82-3200E 16GB

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A-DATA Technology DQKD1A08 1GB

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Kingston 9905624-045.A00G 8GB

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Kingston 9905469-143.A00LF 4GB

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INTENSO 5641160 8GB

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Elpida EBJ21UE8BDF0-DJ-F 2GB

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Corsair CM4B8G2J2400A14K 8GB

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G Skill Intl F4-3466C16-8GTZSW 8GB

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Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

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Kingston 9965669-018.A00G 16GB

A-DATA Technology AO1P26KCST2-BWWS 16GB

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AMD AE34G1601U1 4GB

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Ramaxel Technology RMT3020EC58E9F1333 4GB

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Galaxy Microsystems Ltd. GALAX OC LAB 8GB

Galaxy Microsystems Ltd. GALAX OC LAB 8GB