Samsung M3 78T2953EZ3-CF7 1GB vs Kingston 9905734-082.A00G 16GB

总分

Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

总分

Kingston 9905734-082.A00G 16GB

Kingston 9905734-082.A00G 16GB

差异规格评论

差异

Samsung M3 78T2953EZ3-CF7 1GB

需要考虑的原因
Samsung M3 78T2953EZ3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

4 18.1

测试中的平均数值

Kingston 9905734-082.A00G 16GB

需要考虑的原因
Kingston 9905734-082.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 58

左右 -87% 更低的延时
更快的写入速度，GB/s

15.6 1,950.7

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T2953EZ3-CF7 1GB

Kingston 9905734-082.A00G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

58 31
读取速度，GB/s

4,241.0 18.1
写入速度，GB/s

1,950.7 15.6
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

651 3600

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMA41GR7AFR8N-UH 8GB

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Heoriady HX2666DT8G-TD 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

Micron Technology 16ATF4G64HZ-2G6B2 32GB

Micron Technology 16ATF4G64HZ-2G6B2 32GB

SK Hynix HMT41GS6AFR8A-PB 8GB

SK Hynix HMT41GS6AFR8A-PB 8GB

Corsair CM4X8GF2666C16K4 8GB

Corsair CM4X8GF2666C16K4 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

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Kingston 9905744-076.A00G 16GB