Samsung M3 78T3354BZ0-CCC 256MB vs Corsair CM4X8GD3200C16K2E 8GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Corsair CM4X8GD3200C16K2E 8GB

Corsair CM4X8GD3200C16K2E 8GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 19.6

测试中的平均数值

Corsair CM4X8GD3200C16K2E 8GB

需要考虑的原因
Corsair CM4X8GD3200C16K2E 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 46

左右 -39% 更低的延时
更快的写入速度，GB/s

14.2 1,519.2

测试中的平均数值
更高的内存带宽，mbps

17000 3200

左右 5.31 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Corsair CM4X8GD3200C16K2E 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 33
读取速度，GB/s

2,909.8 19.6
写入速度，GB/s

1,519.2 14.2
内存带宽，mbps

3200 17000

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

3-3-3-12 / 400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

241 3374

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston XN205T-MIE 16GB

Kingston XN205T-MIE 16GB

Kingston 99U5469-046.A00LF 4GB

Kingston 99U5469-046.A00LF 4GB

G Skill Intl F4-3200C16-8GSXKB 8GB

G Skill Intl F4-3200C16-8GSXKB 8GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Samsung M393A5143DB0-CPB 4GB

Samsung M393A5143DB0-CPB 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

G Skill Intl F4-3600C16-32GTZN 32GB

G Skill Intl F4-3600C16-32GTZN 32GB

Smart Modular SH564128FH8N0QHSCG 4GB

Smart Modular SH564128FH8N0QHSCG 4GB

G Skill Intl F4-3200C16-8GSXFB 8GB

G Skill Intl F4-3200C16-8GSXFB 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Corsair CMT32GX4M4C3466C16 8GB

Corsair CMT32GX4M4C3466C16 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-4000C17-8GTRS 8GB

G Skill Intl F4-4000C17-8GTRS 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

G Skill Intl F4-4000C18-32GTZR 32GB

G Skill Intl F4-4000C18-32GTZR 32GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

Patriot Memory (PDP Systems) PSD416G24002S 16GB

Patriot Memory (PDP Systems) PSD416G24002S 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Corsair CMK16GX4M1D3000C16 16GB

Corsair CMK16GX4M1D3000C16 16GB

Kingston 99U5403-124.A00LF 8GB

Kingston 99U5403-124.A00LF 8GB

Crucial Technology CT8G4SFD824AC16FBD1 8GB

Crucial Technology CT8G4SFD824AC16FBD1 8GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Crucial Technology CT8G4SFD824A.C16FE 8GB

Crucial Technology CT8G4SFD824A.C16FE 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-2666C18-4GRS 4GB

G Skill Intl F4-2666C18-4GRS 4GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

Micron Technology 18ASF2G72PDZ-2G3B1 16GB