Samsung M3 78T5663EH3-CF7 2GB vs Corsair CMR32GX4M2C3000C15 16GB

总分

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

总分

Corsair CMR32GX4M2C3000C15 16GB

Corsair CMR32GX4M2C3000C15 16GB

差异规格评论

差异

Samsung M3 78T5663EH3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663EH3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 19.8

测试中的平均数值
更快的写入速度，GB/s

2,451.8 16.0

测试中的平均数值

Corsair CMR32GX4M2C3000C15 16GB

需要考虑的原因
Corsair CMR32GX4M2C3000C15 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 65

左右 -141% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663EH3-CF7 2GB

Corsair CMR32GX4M2C3000C15 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 27
读取速度，GB/s

4,605.9 19.8
写入速度，GB/s

2,451.8 16.0
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

878 3735

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX1600C9S3L/4G 4GB

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G Skill Intl F4-3200C15-8GTZSW 8GB

G Skill Intl F4-3200C15-8GTZSW 8GB

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SK Hynix HMT325U6CFR8C-PB 2GB

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SK Hynix HMA84GL7AMR4N-UH 32GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

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Samsung M471A2K43CB1-CRC 16GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Corsair CMR32GX4M2C3000C15 16GB

Corsair CMR32GX4M2C3000C15 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

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Corsair CMK16GX4M2C3333C16 8GB

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