Samsung M3 78T5663EH3-CF7 2GB vs G Skill Intl F4-2800C15-16GRKD 16GB

总分

Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

总分

G Skill Intl F4-2800C15-16GRKD 16GB

G Skill Intl F4-2800C15-16GRKD 16GB

差异规格评论

差异

Samsung M3 78T5663EH3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663EH3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 14.1

测试中的平均数值
更快的写入速度，GB/s

2,451.8 10.9

测试中的平均数值

G Skill Intl F4-2800C15-16GRKD 16GB

需要考虑的原因
G Skill Intl F4-2800C15-16GRKD 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 65

左右 -132% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663EH3-CF7 2GB

G Skill Intl F4-2800C15-16GRKD 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 28
读取速度，GB/s

4,605.9 14.1
写入速度，GB/s

2,451.8 10.9
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

878 2931

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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G Skill Intl F4-2800C15-16GRKD 16GB

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Kingston 9905458-017.A01LF 4GB

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Micron Technology 8ATF1G64HZ-2G3B2 8GB

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Samsung DDR3 8GB 1600MHz 8GB

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Kingston KHX1866C9D3/8GX 8GB

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Corsair CMK8GX4M1A2400C14 8GB

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AMD AE34G1601U1 4GB

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