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Samsung M3 78T5663EH3-CF7 2GB
Mushkin MR[A/B]4U266GHHF8G 8GB

Samsung M3 78T5663EH3-CF7 2GB vs Mushkin MR[A/B]4U266GHHF8G 8GB

总分
star star star star star
Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

总分
star star star star star
Mushkin MR[A/B]4U266GHHF8G 8GB

Mushkin MR[A/B]4U266GHHF8G 8GB

差异 规格 评论

差异

Samsung M3 78T5663EH3-CF7 2GB 需要考虑的原因
Samsung M3 78T5663EH3-CF7 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 17.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,451.8 left arrow 12.8
    测试中的平均数值
Mushkin MR[A/B]4U266GHHF8G 8GB 需要考虑的原因
Mushkin MR[A/B]4U266GHHF8G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 65
    左右 -124% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663EH3-CF7 2GB
Mushkin MR[A/B]4U266GHHF8G 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    65 left arrow 29
  • 读取速度，GB/s
    4,605.9 left arrow 17.4
  • 写入速度，GB/s
    2,451.8 left arrow 12.8
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    878 left arrow 3113

Samsung M3 78T5663EH3-CF7 2GB RAM的比较

Samsung M3 78T5663FB3-CF7 2GB
Samsung M378T5663DZ3-CF7 2GB

Mushkin MR[A/B]4U266GHHF8G 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 78T5663EH3-CF7 2GB
Samsung M3 78T5663EH3-CF7 2GB
Mushkin MR[A/B]4U266GHHF8G 8GB
Mushkin MR[A/B]4U266GHHF8G 8GB
内存RAM
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Corsair CMK64GX4M4A2133C13 16GB
Corsair CMK64GX4M4A2133C13 16GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
A-DATA Technology AO1P26KCST2-BWWS 16GB
A-DATA Technology AO1P26KCST2-BWWS 16GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
Corsair CMK32GX4M4D3000C16 8GB
Corsair CMK32GX4M4D3000C16 8GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Micron Technology 16ATF4G64HZ-3G2E2 32GB
Micron Technology 16ATF4G64HZ-3G2E2 32GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Essencore Limited IM4AGU88A30-FGGHMB 16GB
Essencore Limited IM4AGU88A30-FGGHMB 16GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
Crucial Technology BLS8G4D26BFSE.16FE 8GB
Crucial Technology BLS8G4D26BFSE.16FE 8GB
内存RAM
Corsair CMSX4GX3M1A1600C9 4GB
Corsair CMSX4GX3M1A1600C9 4GB
Samsung M393A2K43BB1-CRC 16GB
Samsung M393A2K43BB1-CRC 16GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
G Skill Intl F4-3600C19-16GSXK 16GB
G Skill Intl F4-3600C19-16GSXK 16GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Corsair CMSX8GX4M2A2400C16 4GB
Corsair CMSX8GX4M2A2400C16 4GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 9965667-001.A00G 16GB
Kingston 9965667-001.A00G 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M393A1G40DB0-B`B 8GB
Samsung M393A1G40DB0-B`B 8GB
内存RAM
Kingston 9905403-090.A01LF 4GB
Kingston 9905403-090.A01LF 4GB
Kingston XN205T-HYD2 16GB
Kingston XN205T-HYD2 16GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Micron Technology V-GeN D4V16GL24A8R 16GB
Micron Technology V-GeN D4V16GL24A8R 16GB
内存RAM