Samsung M3 78T5663RZ3-CF7 2GB vs Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

总分

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 17

测试中的平均数值
更快的写入速度，GB/s

2,784.6 13.5

测试中的平均数值

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

需要考虑的原因
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

报告一个错误

低于PassMark测试中的延时，ns

24 65

左右 -171% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CF7 2GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 24
读取速度，GB/s

4,806.8 17.0
写入速度，GB/s

2,784.6 13.5
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 12 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

932 2703

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Absolute Latency

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