Samsung M3 78T5663RZ3-CF7 2GB vs SK Hynix HMA84GL7AMR4N-UH 32GB

总分

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分

SK Hynix HMA84GL7AMR4N-UH 32GB

SK Hynix HMA84GL7AMR4N-UH 32GB

差异规格评论

差异

Samsung M3 78T5663RZ3-CF7 2GB

需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 12

测试中的平均数值

SK Hynix HMA84GL7AMR4N-UH 32GB

需要考虑的原因
SK Hynix HMA84GL7AMR4N-UH 32GB

报告一个错误

低于PassMark测试中的延时，ns

30 65

左右 -117% 更低的延时
更快的写入速度，GB/s

8.2 2,784.6

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T5663RZ3-CF7 2GB

SK Hynix HMA84GL7AMR4N-UH 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 30
读取速度，GB/s

4,806.8 12.0
写入速度，GB/s

2,784.6 8.2
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

932 2441

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Mushkin 99[2/7/4]199F 8GB

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Crucial Technology CT16G4DFD8266.C16FP 16GB

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Apacer Technology 78.B1GET.AU00C 4GB

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Corsair CMD32GX4M4C3200C16-R 8GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Corsair CMT32GX4M2Z3200C16 16GB

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Avant Technology W642GU42J5213N 16GB

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Crucial Technology CT51264BD160B.C16F 4GB

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Essencore Limited IM44GU48A30-FGGHAB 4GB

Essencore Limited IM44GU48A30-FGGHAB 4GB

Patriot Memory (PDP Systems) PSD22G6672 2GB

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A-DATA Technology DOVF1B163G2G 2GB

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Apacer Technology 78.C1GMM.AUW0C 8GB

Apacer Technology 78.C1GMM.AUW0C 8GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Apacer Technology 78.BAGMD.AF20B 4GB

Apacer Technology 78.BAGMD.AF20B 4GB