RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M3 78T5663RZ3-CF7 2GB
Smart Modular SF4642G8CK8I8HLSBG 16GB

Samsung M3 78T5663RZ3-CF7 2GB vs Smart Modular SF4642G8CK8I8HLSBG 16GB

总分
star star star star star
Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

总分
star star star star star
Smart Modular SF4642G8CK8I8HLSBG 16GB

Smart Modular SF4642G8CK8I8HLSBG 16GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CF7 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CF7 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 18.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,784.6 left arrow 14.9
    测试中的平均数值
Smart Modular SF4642G8CK8I8HLSBG 16GB 需要考虑的原因
Smart Modular SF4642G8CK8I8HLSBG 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    23 left arrow 65
    左右 -183% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CF7 2GB
Smart Modular SF4642G8CK8I8HLSBG 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    65 left arrow 23
  • 读取速度，GB/s
    4,806.8 left arrow 18.4
  • 写入速度，GB/s
    2,784.6 left arrow 14.9
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    932 left arrow 3456

Samsung M3 78T5663RZ3-CF7 2GB RAM的比较

Samsung M3 78T5663FB3-CF7 2GB
AMD R332G1339U1S 2GB

Smart Modular SF4642G8CK8I8HLSBG 16GB RAM的比较

Kingston 9905403-444.A00LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HMT325S6CFR8C-PB 2GB
SK Hynix HMT325S6CFR8C-PB 2GB
Patriot Memory (PDP Systems) PSD48G266681 8GB
Patriot Memory (PDP Systems) PSD48G266681 8GB
内存RAM
SK Hynix HMT325U6BFR8C-H9 2GB
SK Hynix HMT325U6BFR8C-H9 2GB
Crucial Technology BLS4G4D240FSA.8FADG 4GB
Crucial Technology BLS4G4D240FSA.8FADG 4GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Kingston KF3600C16D4/8GX 8GB
Kingston KF3600C16D4/8GX 8GB
内存RAM
Crucial Technology BLS8G3N169ES4.16FE 8GB
Crucial Technology BLS8G3N169ES4.16FE 8GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266
内存RAM
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
G Skill Intl F4-3200C14-8GTZR 8GB
G Skill Intl F4-3200C14-8GTZR 8GB
内存RAM
G Skill Intl F3-12800CL7-4GBXM 4GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Maxsun MSD48G26Q3 8GB
Maxsun MSD48G26Q3 8GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
G Skill Intl F4-4600C19-8GTZSWC 8GB
G Skill Intl F4-4600C19-8GTZSWC 8GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
G Skill Intl F4-3200C14-16GFX 16GB
G Skill Intl F4-3200C14-16GFX 16GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Corsair CMK32GX4M4B3600C16 8GB
Corsair CMK32GX4M4B3600C16 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Mushkin 99[2/7/4]198F 8GB
Mushkin 99[2/7/4]198F 8GB
内存RAM
Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173EB0-YK0 4GB
Corsair CMN32GX4M2Z4600C18 16GB
Corsair CMN32GX4M2Z4600C18 16GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Apacer Technology 78.C1GM3.C7Z0C 8GB
Apacer Technology 78.C1GM3.C7Z0C 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-2800C17-8GIS 8GB
G Skill Intl F4-2800C17-8GIS 8GB
内存RAM