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Samsung M378A1G43EB1-CPB 8GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB

Samsung M378A1G43EB1-CPB 8GB vs Netac Technology Co Ltd EKBLUE4162417AD 8GB

总分
star star star star star
Samsung M378A1G43EB1-CPB 8GB

Samsung M378A1G43EB1-CPB 8GB

总分
star star star star star
Netac Technology Co Ltd EKBLUE4162417AD 8GB

Netac Technology Co Ltd EKBLUE4162417AD 8GB

差异 规格 评论

差异

Samsung M378A1G43EB1-CPB 8GB 需要考虑的原因
Samsung M378A1G43EB1-CPB 8GB
报告一个错误
Netac Technology Co Ltd EKBLUE4162417AD 8GB 需要考虑的原因
Netac Technology Co Ltd EKBLUE4162417AD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 34
    左右 -42% 更低的延时
  • 更快的读取速度，GB/s
    16.8 left arrow 15.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.0 left arrow 11.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 17000
    左右 1.13 更高的带宽

规格

完整的技术规格清单
Samsung M378A1G43EB1-CPB 8GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    34 left arrow 24
  • 读取速度，GB/s
    15.4 left arrow 16.8
  • 写入速度，GB/s
    11.5 left arrow 12.0
  • 内存带宽，mbps
    17000 left arrow 19200
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2763 left arrow 2946

Samsung M378A1G43EB1-CPB 8GB RAM的比较

Samsung M378A1K43BB1-CPB 8GB
Crucial Technology CT8G4SFRA266.M8FRS 8GB

Netac Technology Co Ltd EKBLUE4162417AD 8GB RAM的比较

Samsung M393B1K70CH0-CH9 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M378A1G43EB1-CPB 8GB
Samsung M378A1G43EB1-CPB 8GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
Netac Technology Co Ltd EKBLUE4162417AD 8GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
Crucial Technology CT8G4SFD8213.M16FB 8GB
Crucial Technology CT8G4SFD8213.M16FB 8GB
内存RAM
Kingston 99U5471-056.A00LF 8GB
Kingston 99U5471-056.A00LF 8GB
Patriot Memory (PDP Systems) PSD48G213382 8GB
Patriot Memory (PDP Systems) PSD48G213382 8GB
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Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
G Skill Intl F4-2400C15-16GTZR 16GB
G Skill Intl F4-2400C15-16GTZR 16GB
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Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
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Kingston KF3200C20S4/8G 8GB
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Kingston 9965525-018.A00LF 4GB
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Shanghai Kuxin Microelectronics Ltd NMUD480E86-3000 8GB
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A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-2400C15-16GVR 16GB
G Skill Intl F4-2400C15-16GVR 16GB
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A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N-TF 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6MFR8N
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
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Mushkin MR[A/B]280HHHH16G 16GB
内存RAM
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Kingmax Semiconductor FLFF65F-C8KM9 4GB
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Ramaxel Technology RMSA3270MB76H8F2400 2GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
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Kingston 9905625-076.A00G 8GB
内存RAM
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A-DATA Technology DQVE1908 512MB
A-DATA Technology DDR4 2133 2OZ 8GB
A-DATA Technology DDR4 2133 2OZ 8GB
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A-DATA Technology AM2U16BC4P2-B05B 4GB
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Kingston CBD26D4U9S8ME-8 8GB
内存RAM
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Nanya Technology NT4GC64B8HG0NS-CG 4GB
Micron Technology 8ATF1G64HZ-2G2G1 8GB
Micron Technology 8ATF1G64HZ-2G2G1 8GB
内存RAM