Samsung M378A2K43DB1-CVF 16GB vs A-DATA Technology AD4S3200316G22-BHYD 16GB

总分

Samsung M378A2K43DB1-CVF 16GB

Samsung M378A2K43DB1-CVF 16GB

总分

A-DATA Technology AD4S3200316G22-BHYD 16GB

A-DATA Technology AD4S3200316G22-BHYD 16GB

差异规格评论

差异

Samsung M378A2K43DB1-CVF 16GB

需要考虑的原因
Samsung M378A2K43DB1-CVF 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 66

左右 55% 更低的延时
更快的读取速度，GB/s

16.4 13.9

测试中的平均数值

A-DATA Technology AD4S3200316G22-BHYD 16GB

需要考虑的原因
A-DATA Technology AD4S3200316G22-BHYD 16GB

报告一个错误

更快的写入速度，GB/s

13.2 13.1

测试中的平均数值
更高的内存带宽，mbps

25600 23400

左右 1.09 更高的带宽

规格

完整的技术规格清单

Samsung M378A2K43DB1-CVF 16GB

A-DATA Technology AD4S3200316G22-BHYD 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

30 66
读取速度，GB/s

16.4 13.9
写入速度，GB/s

13.1 13.2
内存带宽，mbps

23400 25600

Other

描述

PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

3310 2429

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Crucial Technology CT51264BD1339.M16F 4GB

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Crucial Technology BLS16G4D26BFSE.16FE 16GB

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G Skill Intl F3-1866C8-8GTX 8GB

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Samsung M392A4K40BM0-CRC 32GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

Wilk Elektronik S.A. GY2133D464L15/8G 8GB

Wilk Elektronik S.A. GY2133D464L15/8G 8GB

Corsair CML16GX3M2A1600C10 8GB

Corsair CML16GX3M2A1600C10 8GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

InnoDisk Corporation M4C0-AGS1TCSJ 16GB

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Crucial Technology CB8GS2400.C8ET 8GB

Crucial Technology CB8GS2400.C8ET 8GB