Samsung M378A5244CB0-CTD 4GB vs Corsair CM5S16GM4800A40K2 16GB

总分

Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

总分

Corsair CM5S16GM4800A40K2 16GB

Corsair CM5S16GM4800A40K2 16GB

差异规格评论

差异

Samsung M378A5244CB0-CTD 4GB

需要考虑的原因
Samsung M378A5244CB0-CTD 4GB

报告一个错误

更快的读取速度，GB/s

15.8 13.4

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11% 更高的带宽

Corsair CM5S16GM4800A40K2 16GB

需要考虑的原因
Corsair CM5S16GM4800A40K2 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 36

左右 -50% 更低的延时
更快的写入速度，GB/s

12.4 11.8

测试中的平均数值

规格

完整的技术规格清单

Samsung M378A5244CB0-CTD 4GB

Corsair CM5S16GM4800A40K2 16GB

主要特点

存储器类型

DDR4 DDR5
PassMark中的延时，ns

36 24
读取速度，GB/s

15.8 13.4
写入速度，GB/s

11.8 12.4
内存带宽，mbps

21300 19200

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC5-19200, 1.1V, CAS Supported: 22 28 30 32 36 40 42
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz no data / 2400 MHz
排名PassMark (越多越好)

2497 3436

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3600C14-8GTRSB 8GB

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Samsung M378A5244CB0-CTD 4GB

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SK Hynix HMT151R7TFR4C-H9 4GB

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Corsair CMW16GX4M2Z3600C18 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Kingston KH2400C15D4/8 8GB

Kingston KH2400C15D4/8 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

G Skill Intl F4-3600C18-32GTRS 32GB

G Skill Intl F4-3600C18-32GTRS 32GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology CT4G4DFS8213.C8FADP 4GB

Crucial Technology CT4G4DFS8213.C8FADP 4GB