Samsung M378B5173EB0-YK0 4GB vs Patriot Memory (PDP Systems) PSD44G240081S 4GB

总分

Samsung M378B5173EB0-YK0 4GB

Samsung M378B5173EB0-YK0 4GB

总分

Patriot Memory (PDP Systems) PSD44G240081S 4GB

Patriot Memory (PDP Systems) PSD44G240081S 4GB

差异规格评论

差异

Samsung M378B5173EB0-YK0 4GB

需要考虑的原因
Samsung M378B5173EB0-YK0 4GB

报告一个错误

低于PassMark测试中的延时，ns

41 98

左右 58% 更低的延时
更快的写入速度，GB/s

8.2 7.0

测试中的平均数值

Patriot Memory (PDP Systems) PSD44G240081S 4GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD44G240081S 4GB

报告一个错误

更快的读取速度，GB/s

14.8 14.1

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173EB0-YK0 4GB

Patriot Memory (PDP Systems) PSD44G240081S 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 98
读取速度，GB/s

14.1 14.8
写入速度，GB/s

8.2 7.0
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2240 1447

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Kingston 9965684-005.A00G 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

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Crucial Technology CT8G4SFD8213.M16FB 8GB

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Kingston KVR16N11/8-SP 8GB

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Kingmax Semiconductor GLLG42F-DA---------- 8GB

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Kreton Corporation 51624xxxx68x35xxxx 2GB

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Micron Technology 36ASF4G72LZ-2G3A1 32GB