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Samsung M378B5673EH1-CF8 2GB
Corsair CMSX32GX4M2A2666C18 16GB

Samsung M378B5673EH1-CF8 2GB vs Corsair CMSX32GX4M2A2666C18 16GB

总分
star star star star star
Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分
star star star star star
Corsair CMSX32GX4M2A2666C18 16GB

Corsair CMSX32GX4M2A2666C18 16GB

差异 规格 评论

差异

Samsung M378B5673EH1-CF8 2GB 需要考虑的原因
Samsung M378B5673EH1-CF8 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 38
    左右 26% 更低的延时
Corsair CMSX32GX4M2A2666C18 16GB 需要考虑的原因
Corsair CMSX32GX4M2A2666C18 16GB
报告一个错误
  • 更快的读取速度，GB/s
    15.2 left arrow 12.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.1 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 8500
    左右 2.51 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673EH1-CF8 2GB
Corsair CMSX32GX4M2A2666C18 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 38
  • 读取速度，GB/s
    12.7 left arrow 15.2
  • 写入速度，GB/s
    7.5 left arrow 13.1
  • 内存带宽，mbps
    8500 left arrow 21300
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-21300, 1.2V, CAS Supported: 11 12 13 14 15 16 18
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1988 left arrow 2892

Samsung M378B5673EH1-CF8 2GB RAM的比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB

Corsair CMSX32GX4M2A2666C18 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9965525-140.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

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内存RAM
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内存RAM
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内存RAM
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Kingston 9905403-444.A00LF 4GB
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内存RAM
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内存RAM
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Kingston HX426C16FB2/8-SP 8GB
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G Skill Intl F4-2400C14-16GVK 16GB
内存RAM
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G Skill Intl F2-8500CL5-2GBPI 2GB
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内存RAM
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Nanya Technology M2F8G64CB8HC9N-DI 8GB
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G Skill Intl F4-3600C14-8GTRSB 8GB
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Patriot Memory (PDP Systems) PSD22G8002 2GB
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