Samsung M378B5673EH1-CF8 2GB vs Maxsun MSD416G26Q3 16GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Maxsun MSD416G26Q3 16GB

Maxsun MSD416G26Q3 16GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 84

左右 67% 更低的延时
更快的读取速度，GB/s

12.7 12.5

测试中的平均数值
更快的写入速度，GB/s

7.5 7.0

测试中的平均数值

Maxsun MSD416G26Q3 16GB

需要考虑的原因
Maxsun MSD416G26Q3 16GB

报告一个错误

更高的内存带宽，mbps

21300 8500

左右 2.51 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Maxsun MSD416G26Q3 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 84
读取速度，GB/s

12.7 12.5
写入速度，GB/s

7.5 7.0
内存带宽，mbps

8500 21300

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1066 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1988 1486

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Crucial Technology CT8G4SFD8213.M16FB 8GB

Crucial Technology CT8G4SFD8213.M16FB 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Mushkin 99[2/7/4]200[F/T] 8GB

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G Skill Intl F4-4000C18-8GTZRB 8GB

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G Skill Intl F4-3200C16-4GRK 4GB

G Skill Intl F4-3200C16-4GRK 4GB