Samsung M378T5663QZ3-CF7 2GB vs Corsair CMV4GX4M1A2400C16 4GB

总分

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分

Corsair CMV4GX4M1A2400C16 4GB

Corsair CMV4GX4M1A2400C16 4GB

差异规格评论

差异

Samsung M378T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB

报告一个错误

低于PassMark测试中的延时，ns

56 71

左右 21% 更低的延时
更快的读取速度，GB/s

4 14.9

测试中的平均数值

Corsair CMV4GX4M1A2400C16 4GB

需要考虑的原因
Corsair CMV4GX4M1A2400C16 4GB

报告一个错误

更快的写入速度，GB/s

7.8 1,813.5

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M378T5663QZ3-CF7 2GB

Corsair CMV4GX4M1A2400C16 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 71
读取速度，GB/s

4,387.7 14.9
写入速度，GB/s

1,813.5 7.8
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 25
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

693 1631

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMT41GU7MFR8A-H9 8GB

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Peak Electronics 256X64M-67E 2GB

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A-DATA Technology AO1P26KC8T1-BXFSHC 8GB

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Kingston 9905584-016.A00LF 4GB

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Corsair CMZ16GX3M2A2400C10 8GB

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A-DATA Technology DOVF1B163G2G 2GB

Nanya Technology NT8GA64D88CX3S-JR 8GB

Nanya Technology NT8GA64D88CX3S-JR 8GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Chun Well Technology Holding Limited D4U1636144B 16GB

Chun Well Technology Holding Limited D4U1636144B 16GB

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

Crucial Technology CT16G4DFD8266.C16FE 16GB

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A-DATA Technology DDR2 800G 2GB

A-DATA Technology DDR2 800G 2GB

SK Hynix HMA41GR7MFR8N-TF 8GB

SK Hynix HMA41GR7MFR8N-TF 8GB