Samsung M378T5663QZ3-CF7 2GB vs G Skill Intl F4-3800C14-16GTZN 16GB

总分

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分

G Skill Intl F4-3800C14-16GTZN 16GB

G Skill Intl F4-3800C14-16GTZN 16GB

差异规格评论

差异

Samsung M378T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 21.7

测试中的平均数值

G Skill Intl F4-3800C14-16GTZN 16GB

需要考虑的原因
G Skill Intl F4-3800C14-16GTZN 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 56

左右 -87% 更低的延时
更快的写入速度，GB/s

16.6 1,813.5

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M378T5663QZ3-CF7 2GB

G Skill Intl F4-3800C14-16GTZN 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 30
读取速度，GB/s

4,387.7 21.7
写入速度，GB/s

1,813.5 16.6
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

693 3806

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Crucial Technology BLE8G4D30AEEA.K16FE 8GB

Crucial Technology BLE8G4D30AEEA.K16FE 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

G Skill Intl F4-3600C16-8GTESC 8GB

G Skill Intl F4-3600C16-8GTESC 8GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

Wilk Elektronik S.A. GR2133D464L15S/8G 8GB

Wilk Elektronik S.A. GR2133D464L15S/8G 8GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Mushkin 99[2/7/4]200F 8GB

Mushkin 99[2/7/4]200F 8GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

G Skill Intl F4-3600C19-16GSXK 16GB

G Skill Intl F4-3600C19-16GSXK 16GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

Samsung M378A5244BB0-CRC 4GB

Samsung M378A5244BB0-CRC 4GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

Micron Technology MTA8ATF1G64HZ-2G3B1 16GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Lexar Co Limited LD4AS016G-H3200GST 16GB

Lexar Co Limited LD4AS016G-H3200GST 16GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Ramaxel Technology RMT3170EB68F9W1600 4GB

Corsair CMU64GX4M4A2666C16 16GB

Corsair CMU64GX4M4A2666C16 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3300C16-4GRRD 4GB

G Skill Intl F4-3300C16-4GRRD 4GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Kingston KHX2933C17D4/16G 16GB

Kingston KHX2933C17D4/16G 16GB

Corsair CM2X1024-6400C4 1GB

Corsair CM2X1024-6400C4 1GB

Micron Technology 8R8F1G64HZ-2G3B1 8GB

Micron Technology 8R8F1G64HZ-2G3B1 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Crucial Technology BLS8G4D26BFSCK.8FD 8GB

Crucial Technology BLS8G4D26BFSCK.8FD 8GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

G Skill Intl F4-2666C15-4GRR 4GB

G Skill Intl F4-2666C15-4GRR 4GB