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Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-2400C16-8GFX 8GB

Samsung M393B1G70BH0-CK0 8GB vs G Skill Intl F4-2400C16-8GFX 8GB

总分
star star star star star
Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分
star star star star star
G Skill Intl F4-2400C16-8GFX 8GB

G Skill Intl F4-2400C16-8GFX 8GB

差异 规格 评论

差异

Samsung M393B1G70BH0-CK0 8GB 需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB
报告一个错误
G Skill Intl F4-2400C16-8GFX 8GB 需要考虑的原因
G Skill Intl F4-2400C16-8GFX 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 51
    左右 -132% 更低的延时
  • 更快的读取速度，GB/s
    16.3 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.5 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-2400C16-8GFX 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 22
  • 读取速度，GB/s
    9.8 left arrow 16.3
  • 写入速度，GB/s
    8.1 left arrow 10.5
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 9 11 13 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2208 left arrow 2738

Samsung M393B1G70BH0-CK0 8GB RAM的比较

TwinMOS 9DEPBOZE-TATP 8GB
SK Hynix HMT125U6TFR8C-H9 2GB

G Skill Intl F4-2400C16-8GFX 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Transcend Information JM2666HLB-8G 8GB
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内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
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Corsair CMU64GX4M4C3200C16 16GB
内存RAM
Apacer Technology AQD-D4U8GN24-SE 8GB
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内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
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Kingston 9965604-008.D00G 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
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Kingmax Semiconductor GLAG43F-18---------- 8GB
内存RAM
Kingston 99U5403-124.A00LF 8GB
Kingston 99U5403-124.A00LF 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Corsair CMK32GX4M4B3200C16 8GB
Corsair CMK32GX4M4B3200C16 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology BLS16G4D26BFSC.16FD 16GB
Crucial Technology BLS16G4D26BFSC.16FD 16GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
Apacer Technology 78.BAGM6.40C0B 4GB
Apacer Technology 78.BAGM6.40C0B 4GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Corsair CMW64GX4M2E3200C16 32GB
Corsair CMW64GX4M2E3200C16 32GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
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Panram International Corporation PUD42400C154G2NJK 4GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Crucial Technology CT8G4SFRA32A.M8FJ 8GB
Crucial Technology CT8G4SFRA32A.M8FJ 8GB
内存RAM
Crucial Technology CT8G4DFRA32A.C4FE 8GB
Crucial Technology CT8G4DFRA32A.C4FE 8GB
Crucial Technology CT8G4DFS832A.C8FE 8GB
Crucial Technology CT8G4DFS832A.C8FE 8GB
内存RAM