Samsung M393B1K70CH0-CH9 8GB vs Smart Modular SMS4WEC8C2K0446FCG 16GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

Smart Modular SMS4WEC8C2K0446FCG 16GB

Smart Modular SMS4WEC8C2K0446FCG 16GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

Smart Modular SMS4WEC8C2K0446FCG 16GB

需要考虑的原因
Smart Modular SMS4WEC8C2K0446FCG 16GB

报告一个错误

低于PassMark测试中的延时，ns

35 44

左右 -26% 更低的延时
更快的读取速度，GB/s

14.1 11.2

测试中的平均数值
更快的写入速度，GB/s

9.0 8.1

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

Smart Modular SMS4WEC8C2K0446FCG 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 35
读取速度，GB/s

11.2 14.1
写入速度，GB/s

8.1 9.0
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2293 2583

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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SK Hynix GKE160SO102408-3000 16GB

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A-DATA Technology AD73I1C1674EV 4GB

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Corsair CMW128GX4M4D3000C16 32GB

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TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Gloway International Co. Ltd. YCT4S2666D19081C 8GB

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Samsung M393B5170FH0-CK0 4GB

Crucial Technology CT16G4DFD8213.C16FH1 16GB

Crucial Technology CT16G4DFD8213.C16FH1 16GB