Samsung M393B1K70QB0-CK0 8GB vs Nanya Technology NT8GA64D88AX3S-HR 8GB

总分

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

总分

Nanya Technology NT8GA64D88AX3S-HR 8GB

Nanya Technology NT8GA64D88AX3S-HR 8GB

差异规格评论

差异

Samsung M393B1K70QB0-CK0 8GB

需要考虑的原因
Samsung M393B1K70QB0-CK0 8GB

报告一个错误

低于PassMark测试中的延时，ns

47 96

左右 51% 更低的延时
更快的读取速度，GB/s

10.4 6.8

测试中的平均数值
更快的写入速度，GB/s

7.8 4.2

测试中的平均数值

Nanya Technology NT8GA64D88AX3S-HR 8GB

需要考虑的原因
Nanya Technology NT8GA64D88AX3S-HR 8GB

报告一个错误

更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70QB0-CK0 8GB

Nanya Technology NT8GA64D88AX3S-HR 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 96
读取速度，GB/s

10.4 6.8
写入速度，GB/s

7.8 4.2
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2169 992

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology AFLD44EK2P 4GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Transcend Information TS2GLH64V1B 16GB

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SK Hynix HMT325S6CFR8C-PB 2GB

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Crucial Technology BL16G26C16S4B.16FD 16GB

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