Samsung M393B2G70BH0-CH9 16GB vs G Skill Intl F4-3600C16-8GTESC 8GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

G Skill Intl F4-3600C16-8GTESC 8GB

G Skill Intl F4-3600C16-8GTESC 8GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

G Skill Intl F4-3600C16-8GTESC 8GB

需要考虑的原因
G Skill Intl F4-3600C16-8GTESC 8GB

报告一个错误

低于PassMark测试中的延时，ns

31 33

左右 -6% 更低的延时
更快的读取速度，GB/s

20.3 8

测试中的平均数值
更快的写入速度，GB/s

18.2 7.3

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

G Skill Intl F4-3600C16-8GTESC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 31
读取速度，GB/s

8.0 20.3
写入速度，GB/s

7.3 18.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1911 3738

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Team Group Inc. TEAMGROUP-ED4-2400 16GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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SK Hynix HMT325S6CFR8C-PB 2GB

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