RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-4400C19-32GVK 32GB
比较
Samsung M393B2G70BH0-CH9 16GB vs G Skill Intl F4-4400C19-32GVK 32GB
总分
Samsung M393B2G70BH0-CH9 16GB
总分
G Skill Intl F4-4400C19-32GVK 32GB
差异
规格
评论
差异
需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB
报告一个错误
需要考虑的原因
G Skill Intl F4-4400C19-32GVK 32GB
报告一个错误
更快的读取速度,GB/s
21.1
8
测试中的平均数值
更快的写入速度,GB/s
18.8
7.3
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-4400C19-32GVK 32GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
33
33
读取速度,GB/s
8.0
21.1
写入速度,GB/s
7.3
18.8
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, , CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1911
3959
Samsung M393B2G70BH0-CH9 16GB RAM的比较
Samsung M393B1K70BH1-CH9 8GB
Essencore Limited KD48GU880-34A170X 8GB
G Skill Intl F4-4400C19-32GVK 32GB RAM的比较
Crucial Technology CT8G4SFS632A.C4FE 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingmax Semiconductor KLDE88F-B8MO5 2GB
Corsair CMK16GX4M2F4500C19 8GB
SK Hynix HMT41GU7MFR8A-H9 8GB
G Skill Intl F4-3200C14-16GTZDCB 16GB
Samsung M378B5273CH0-CH9 4GB
G Skill Intl F4-3600C16-32GTZN 32GB
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix V-GeN D4H4GL30A8TX5 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
G Skill Intl F4-4000C18-32GTZN 32GB
SK Hynix HYMP112S64CP6-S6 1GB
Apacer Technology GD2.1527WT.001 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Team Group Inc. TEAMGROUP-UD4-2400 8GB
AMD R5S38G1601U2S 8GB
Crucial Technology CT16G4SFRA266.M8FB 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Wilk Elektronik S.A. IRP3600D4V64L17/16G 16GB
Micron Technology 8ATF51264AZ-2G1B1 4GB
Inmos + 256MB
Crucial Technology CT51264AC800.C16FC 4GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Essencore Limited KD4AGU880-36A180U 16GB
Crucial Technology CT25664BA160B.C16F 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
A-DATA Technology AD73I1B1672EG 2GB
Elpida EBJ21UE8BDF0-AE-F 2GB
报告一个错误
×
Bug description
Source link