Samsung M393B2G70BH0-CK0 16GB vs A-DATA Technology DDR4 2800 2OZ 4GB

总分

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分

A-DATA Technology DDR4 2800 2OZ 4GB

A-DATA Technology DDR4 2800 2OZ 4GB

差异规格评论

差异

Samsung M393B2G70BH0-CK0 16GB

需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB

报告一个错误

A-DATA Technology DDR4 2800 2OZ 4GB

需要考虑的原因
A-DATA Technology DDR4 2800 2OZ 4GB

报告一个错误

低于PassMark测试中的延时，ns

33 54

左右 -64% 更低的延时
更快的读取速度，GB/s

16.2 9.2

测试中的平均数值
更快的写入速度，GB/s

12.2 8.1

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CK0 16GB

A-DATA Technology DDR4 2800 2OZ 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

54 33
读取速度，GB/s

9.2 16.2
写入速度，GB/s

8.1 12.2
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2105 3026

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B2G70BH0-CK0 16GB

A-DATA Technology DDR4 2800 2OZ 4GB

A-DATA Technology DDR4 2800 2OZ 4GB

A-DATA Technology ADOVE1A0834E 1GB

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Crucial Technology CT8G4DFS824A.C8FJ 8GB

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Ramos Technology RMB4GB58BCA3-13HC 4GB

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Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB

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G Skill Intl F4-3200C14-32GTRS 32GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Apacer Technology 78.BAGM6.40C0B 4GB

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Colorful Technology Ltd BAPC08G2666D4S8 8GB

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