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Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT8G4DFS8266.C8FJ 8GB

Samsung M393B2G70BH0-CK0 16GB vs Crucial Technology CT8G4DFS8266.C8FJ 8GB

总分
star star star star star
Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

总分
star star star star star
Crucial Technology CT8G4DFS8266.C8FJ 8GB

Crucial Technology CT8G4DFS8266.C8FJ 8GB

差异 规格 评论

差异

Samsung M393B2G70BH0-CK0 16GB 需要考虑的原因
Samsung M393B2G70BH0-CK0 16GB
报告一个错误
Crucial Technology CT8G4DFS8266.C8FJ 8GB 需要考虑的原因
Crucial Technology CT8G4DFS8266.C8FJ 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 54
    左右 -42% 更低的延时
  • 更快的读取速度，GB/s
    16.3 left arrow 9.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.7 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT8G4DFS8266.C8FJ 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    54 left arrow 38
  • 读取速度，GB/s
    9.2 left arrow 16.3
  • 写入速度，GB/s
    8.1 left arrow 10.7
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2105 left arrow 2942

Samsung M393B2G70BH0-CK0 16GB RAM的比较

Nanya Technology M2F2G64CB88D7N-CG 2GB
Micron Technology 9JSF51272AZ-1G9P1 4GB

Crucial Technology CT8G4DFS8266.C8FJ 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT8G4DFS8266.C8FJ 8GB
Crucial Technology CT8G4DFS8266.C8FJ 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Avant Technology J641GU48J5213NG 8GB
Avant Technology J641GU48J5213NG 8GB
内存RAM
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
G Skill Intl F4-4266C19-8GTRS 8GB
G Skill Intl F4-4266C19-8GTRS 8GB
内存RAM
Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Kingston 9965600-012.A02G 16GB
Kingston 9965600-012.A02G 16GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Corsair CMD16GX4M4C3200C16 4GB
Corsair CMD16GX4M4C3200C16 4GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CMSO16GX4M2A2133C15 8GB
Corsair CMSO16GX4M2A2133C15 8GB
内存RAM
Apacer Technology 78.A1GC6.9H10C 2GB
Apacer Technology 78.A1GC6.9H10C 2GB
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB
内存RAM
Kingston HP669238-071-HYC 4GB
Kingston HP669238-071-HYC 4GB
Micron Technology V-GeN D4V16GL24A8R 16GB
Micron Technology V-GeN D4V16GL24A8R 16GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Crucial Technology CT8G4SFS632A.M4FE 8GB
Crucial Technology CT8G4SFS632A.M4FE 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Corsair CMW16GX4M2K4266C19 8GB
Corsair CMW16GX4M2K4266C19 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Corsair CMR32GX4M2A2666C16 16GB
Corsair CMR32GX4M2A2666C16 16GB
内存RAM
Kingston KP223C-ELD 2GB
Kingston KP223C-ELD 2GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
Crucial Technology BLS8G4D240FSA.16FAD 8GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Kingston MSISID4S9S8ME-8 8GB
Kingston MSISID4S9S8ME-8 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
内存RAM