Samsung M395T2863QZ4-CF76 1GB vs Patriot Memory (PDP Systems) 4400 C19 Series 8GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 19.5

测试中的平均数值
更快的写入速度，GB/s

2,404.5 17.8

测试中的平均数值

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 4400 C19 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 104

左右 -316% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Patriot Memory (PDP Systems) 4400 C19 Series 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 25
读取速度，GB/s

3,192.0 19.5
写入速度，GB/s

2,404.5 17.8
内存带宽，mbps

6400 17000

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

786 3910

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-4000C19-4GTZ 4GB

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Kingston 9905403-134.A00LF 2GB

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Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

SK Hynix HMA82GU6DJR8N-WM 16GB

SK Hynix HMA82GU6DJR8N-WM 16GB

Smart Modular SH564128FH8N0QHSCG 4GB

Smart Modular SH564128FH8N0QHSCG 4GB

Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology CT8G4SFD824A.C16FDD2 8GB

Crucial Technology CT8G4SFD824A.C16FDD2 8GB

Micron Technology 36JSF2G72PZ-1G9N1 16GB

Micron Technology 36JSF2G72PZ-1G9N1 16GB

Kingston KHX3466C17D4/16GX 16GB

Kingston KHX3466C17D4/16GX 16GB