Samsung M4 70T2864QZ3-CE6 1GB vs Mushkin MR[A/B]4U320LLLM16G 16GB

总分

Samsung M4 70T2864QZ3-CE6 1GB

Samsung M4 70T2864QZ3-CE6 1GB

总分

Mushkin MR[A/B]4U320LLLM16G 16GB

Mushkin MR[A/B]4U320LLLM16G 16GB

差异规格评论

差异

Samsung M4 70T2864QZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2864QZ3-CE6 1GB

报告一个错误

更快的读取速度，GB/s

3 20

测试中的平均数值

Mushkin MR[A/B]4U320LLLM16G 16GB

需要考虑的原因
Mushkin MR[A/B]4U320LLLM16G 16GB

报告一个错误

低于PassMark测试中的延时，ns

20 65

左右 -225% 更低的延时
更快的写入速度，GB/s

15.0 1,574.4

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2864QZ3-CE6 1GB

Mushkin MR[A/B]4U320LLLM16G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 20
读取速度，GB/s

3,858.9 20.0
写入速度，GB/s

1,574.4 15.0
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

607 3619

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Avant Technology W641GU48J7240ND 8GB

Avant Technology W641GU48J7240ND 8GB

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Apacer Technology 78.C1GQ5.C7C0B 8GB

Apacer Technology 78.C1GQ5.C7C0B 8GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology AO1P21FC8T1-BSKS 8GB

A-DATA Technology AO1P21FC8T1-BSKS 8GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

Smart Modular SF4641G8CK8IEHLSBG 8GB

Smart Modular SF4641G8CK8IEHLSBG 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

AMD R9S48G3206U2S 8GB

AMD R9S48G3206U2S 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

AMD R748G2606U2S 8GB

AMD R748G2606U2S 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

INTENSO M418039 8GB

INTENSO M418039 8GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

AMD R748G2400U2S-UO 8GB

AMD R748G2400U2S-UO 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

G Skill Intl F4-3600C16-16GTRGC 16GB

G Skill Intl F4-3600C16-16GTRGC 16GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Micron Technology TEAMGROUP-UD4-3000 16GB

Micron Technology TEAMGROUP-UD4-3000 16GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Kingston 9905625-076.A00G 8GB

Kingston 9905625-076.A00G 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

Micron Technology 8ATF1G64HZ-2G3B2 8GB

Micron Technology 8ATF1G64HZ-2G3B2 8GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Crucial Technology CT8G4DFS632A.M4FE 8GB

Crucial Technology CT8G4DFS632A.M4FE 8GB