Samsung M4 70T2953EZ3-CE6 1GB vs Kingston 9905624-007.A00G 8GB

总分

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

总分

Kingston 9905624-007.A00G 8GB

Kingston 9905624-007.A00G 8GB

差异规格评论

差异

Samsung M4 70T2953EZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2953EZ3-CE6 1GB

报告一个错误

更快的读取速度，GB/s

3 13.8

测试中的平均数值

Kingston 9905624-007.A00G 8GB

需要考虑的原因
Kingston 9905624-007.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 73

左右 -204% 更低的延时
更快的写入速度，GB/s

6.7 1,423.3

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2953EZ3-CE6 1GB

Kingston 9905624-007.A00G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

73 24
读取速度，GB/s

3,510.5 13.8
写入速度，GB/s

1,423.3 6.7
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

476 2168

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M393B1K70CH0-YH9 8GB

Corsair CMD16GX4M2B2800C14 8GB

Corsair CMD16GX4M2B2800C14 8GB

Kingston 99U5474-022.A00LF 2GB

Kingston 99U5474-022.A00LF 2GB

Kingston 9905678-027.A00G 8GB

Kingston 9905678-027.A00G 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Netac Technology Co Ltd EKBLACK4163216AD 8GB

Netac Technology Co Ltd EKBLACK4163216AD 8GB

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

Crucial Technology BLE4G4D26AFEA.8FAD 4GB

Crucial Technology BLE4G4D26AFEA.8FAD 4GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

Crucial Technology BL8G32C16U4RL.M8FE1 8GB

Crucial Technology BL8G32C16U4RL.M8FE1 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

G Skill Intl F4-4000C18-16GTZR 16GB

G Skill Intl F4-4000C18-16GTZR 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Gloway International Co. Ltd. TYA4U2666D19321C 32GB

Gloway International Co. Ltd. TYA4U2666D19321C 32GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Corsair CMK32GX4M4Z3200C16 8GB

Corsair CMK32GX4M4Z3200C16 8GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

Patriot Memory (PDP Systems) 2800 C18 Series 16GB

takeMS International AG TMS2GB264D082-805G 2GB

takeMS International AG TMS2GB264D082-805G 2GB

Crucial Technology CT8G4DFS8213.C8FDR1 8GB

Crucial Technology CT8G4DFS8213.C8FDR1 8GB

Kingston 9905403-134.A00LF 2GB

Kingston 9905403-134.A00LF 2GB

Mushkin 99[2/7/4]199[F/T] 8GB

Mushkin 99[2/7/4]199[F/T] 8GB

Kingston 99U5584-007.A00LF 4GB

Kingston 99U5584-007.A00LF 4GB

AMD R744G2606U1S 4GB

AMD R744G2606U1S 4GB

SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

Panram International Corporation PUD42133C154G2VS 4GB

Panram International Corporation PUD42133C154G2VS 4GB

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Transcend Information JM3200HSE-32G 32GB

Transcend Information JM3200HSE-32G 32GB