Samsung M4 70T5663CZ3-CE6 2GB vs G Skill Intl F4-3600C19-16GTRG 16GB

总分

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分

G Skill Intl F4-3600C19-16GTRG 16GB

G Skill Intl F4-3600C19-16GTRG 16GB

差异规格评论

差异

Samsung M4 70T5663CZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 19.4

测试中的平均数值

G Skill Intl F4-3600C19-16GTRG 16GB

需要考虑的原因
G Skill Intl F4-3600C19-16GTRG 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 69

左右 -176% 更低的延时
更快的写入速度，GB/s

16.3 1,441.2

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663CZ3-CE6 2GB

G Skill Intl F4-3600C19-16GTRG 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 25
读取速度，GB/s

3,325.1 19.4
写入速度，GB/s

1,441.2 16.3
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

525 3933

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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A-DATA Technology AD73I1C1674EV 4GB

Samsung M393A1G40EB1-CPB 8GB

Samsung M393A1G40EB1-CPB 8GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

G Skill Intl F4-3600C19-16GTRG 16GB

G Skill Intl F4-3600C19-16GTRG 16GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Crucial Technology BLE4G3D1608DE1TX0. 4GB

Kingston KKN2NM-MIE 4GB

Kingston KKN2NM-MIE 4GB

Kingston 99U5584-007.A00LF 4GB

Kingston 99U5584-007.A00LF 4GB

Apacer Technology 78.D1GS7.B7B0B 16GB

Apacer Technology 78.D1GS7.B7B0B 16GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Micron Technology 16ATF4G64HZ-2G6B2 32GB

Micron Technology 16ATF4G64HZ-2G6B2 32GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

G Skill Intl F4-3600C18-32GTRG 32GB

G Skill Intl F4-3600C18-32GTRG 32GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Corsair CMR64GX4M4K3600C18 16GB

Corsair CMR64GX4M4K3600C18 16GB

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

Samsung M471A2G43AB2-CWE 16GB

Samsung M471A2G43AB2-CWE 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Panram International Corporation PUD42400C154G2NJK 4GB

Panram International Corporation PUD42400C154G2NJK 4GB

Kingston KVT8FP-HYC 4GB

Kingston KVT8FP-HYC 4GB

Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB

Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB

Samsung M386B4G70DM0-CMA4 32GB

Samsung M386B4G70DM0-CMA4 32GB

Crucial Technology BL16G36C16U4W.M8FB1 16GB

Crucial Technology BL16G36C16U4W.M8FB1 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Micron Technology 36ADS2G72PZ-2G1A1 16GB

Micron Technology 36ADS2G72PZ-2G1A1 16GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Avant Technology W642GU42J9266N8 16GB

Avant Technology W642GU42J9266N8 16GB