Samsung M4 70T5663CZ3-CE6 2GB vs Kingston 9965669-018.A00G 16GB

总分

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

总分

Kingston 9965669-018.A00G 16GB

Kingston 9965669-018.A00G 16GB

差异规格评论

差异

Samsung M4 70T5663CZ3-CE6 2GB

需要考虑的原因
Samsung M4 70T5663CZ3-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 12.1

测试中的平均数值

Kingston 9965669-018.A00G 16GB

需要考虑的原因
Kingston 9965669-018.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 69

左右 -123% 更低的延时
更快的写入速度，GB/s

8.3 1,441.2

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T5663CZ3-CE6 2GB

Kingston 9965669-018.A00G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 31
读取速度，GB/s

3,325.1 12.1
写入速度，GB/s

1,441.2 8.3
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

525 2460

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

SK Hynix HMAA4GU6AJR8N-XN 32GB

SK Hynix HMAA4GU6AJR8N-XN 32GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Crucial Technology BLS16G4D240FSB.16FBD 16GB

Crucial Technology BLS16G4D240FSB.16FBD 16GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Corsair CMR16GX4M2Z3200C16 8GB

Corsair CMR16GX4M2Z3200C16 8GB

G Skill Intl F3-2400C11-8GSR 8GB

G Skill Intl F3-2400C11-8GSR 8GB

Kingston KHX3000C16D4/32GX 32GB

Kingston KHX3000C16D4/32GX 32GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Essencore Limited IM44GU48A30-FGGHAB 4GB

Essencore Limited IM44GU48A30-FGGHAB 4GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Micron Technology 8ATF1G64AZ-2G6E1 8GB

Micron Technology 8ATF1G64AZ-2G6E1 8GB

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

PUSKILL PJ16TFK1GM8 16GB

PUSKILL PJ16TFK1GM8 16GB

A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

G Skill Intl F4-4000C14-8GTZR 8GB

G Skill Intl F4-4000C14-8GTZR 8GB

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

SpecTek Incorporated 16G 2666 CL 19 16GB

SpecTek Incorporated 16G 2666 CL 19 16GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

A-DATA Technology AO1P24HC4R1-BSIS 4GB

A-DATA Technology AO1P24HC4R1-BSIS 4GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

A-DATA Technology AO1P24HC8T1-BSFS 8GB

A-DATA Technology AO1P24HC8T1-BSFS 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

G Skill Intl F4-3600C16-16GTZNC 16GB

G Skill Intl F4-3600C16-16GTZNC 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-4000C15-8GTRS 8GB

G Skill Intl F4-4000C15-8GTRS 8GB