Samsung M4 70T5663EH3-CF7 2GB vs Samsung M4 70T5663QH3-CF7 2GB

总分

Samsung M4 70T5663EH3-CF7 2GB

Samsung M4 70T5663EH3-CF7 2GB

总分

Samsung M4 70T5663QH3-CF7 2GB

Samsung M4 70T5663QH3-CF7 2GB

差异规格评论

差异

Samsung M4 70T5663EH3-CF7 2GB

需要考虑的原因
Samsung M4 70T5663EH3-CF7 2GB

报告一个错误

Samsung M4 70T5663QH3-CF7 2GB

需要考虑的原因
Samsung M4 70T5663QH3-CF7 2GB

报告一个错误

低于PassMark测试中的延时，ns

46 66

左右 -43% 更低的延时
更快的读取速度，GB/s

5 4

测试中的平均数值
更快的写入速度，GB/s

2,264.2 1,906.1

测试中的平均数值

规格

完整的技术规格清单

Samsung M4 70T5663EH3-CF7 2GB

Samsung M4 70T5663QH3-CF7 2GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

66 46
读取速度，GB/s

4,323.0 5,243.1
写入速度，GB/s

1,906.1 2,264.2
内存带宽，mbps

6400 6400

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
时序/时钟速度

5-5-5-15 / 800 MHz 5-5-5-15 / 800 MHz
排名PassMark (越多越好)

703 775

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M4 70T5663EH3-CF7 2GB

Samsung M4 70T5663EH3-CF7 2GB

Samsung M4 70T5663QH3-CF7 2GB

Samsung M4 70T5663QH3-CF7 2GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

G Skill Intl F4-2666C16-8GRB 8GB

G Skill Intl F4-2666C16-8GRB 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Kingston KHX3000C15D4/8GX 8GB

Kingston KHX3000C15D4/8GX 8GB

Micron Technology 16HTF25664AY-800G1 2GB

Micron Technology 16HTF25664AY-800G1 2GB

Corsair CMK16GX4M1A2666C16 16GB

Corsair CMK16GX4M1A2666C16 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Corsair CMD8GX4M2B3000C15 4GB

Corsair CMD8GX4M2B3000C15 4GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

Kingston 9905625-075.A00G 16GB

Kingston 9905625-075.A00G 16GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-3000 CL17 8GB 8GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Kingston KWTHG4-MIE 16GB

Kingston KWTHG4-MIE 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-4266C16-8GTZR 8GB

G Skill Intl F4-4266C16-8GTZR 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

G Skill Intl F4-4000C17-16GTZRB 16GB

G Skill Intl F4-4000C17-16GTZRB 16GB

Kingston KHX2400C11D3/4GX 4GB

Kingston KHX2400C11D3/4GX 4GB

G Skill Intl F4-3000C14-8GTZR 8GB

G Skill Intl F4-3000C14-8GTZR 8GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

Ramaxel Technology RMT3020EC58E9F1333 4GB

Micron Technology 16ATF4G64AZ-3G2B1 32GB

Micron Technology 16ATF4G64AZ-3G2B1 32GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

A-DATA Technology AO1P21FC8T1-BSKS 8GB

A-DATA Technology AO1P21FC8T1-BSKS 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB

OM Nanotech Pvt.Ltd V1D4SF32GB2G82G83200 32GB