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Samsung M471A1K43DB1-CTD 8GB
A-DATA Technology AO2P21FC4R1-BRFS 4GB

Samsung M471A1K43DB1-CTD 8GB vs A-DATA Technology AO2P21FC4R1-BRFS 4GB

总分
star star star star star
Samsung M471A1K43DB1-CTD 8GB

Samsung M471A1K43DB1-CTD 8GB

总分
star star star star star
A-DATA Technology AO2P21FC4R1-BRFS 4GB

A-DATA Technology AO2P21FC4R1-BRFS 4GB

差异 规格 评论

差异

Samsung M471A1K43DB1-CTD 8GB 需要考虑的原因
Samsung M471A1K43DB1-CTD 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.7 left arrow 15.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.8 left arrow 10.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 17000
    左右 1.25% 更高的带宽
A-DATA Technology AO2P21FC4R1-BRFS 4GB 需要考虑的原因
A-DATA Technology AO2P21FC4R1-BRFS 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 35
    左右 -35% 更低的延时

规格

完整的技术规格清单
Samsung M471A1K43DB1-CTD 8GB
A-DATA Technology AO2P21FC4R1-BRFS 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 26
  • 读取速度，GB/s
    15.7 left arrow 15.2
  • 写入速度，GB/s
    11.8 left arrow 10.8
  • 内存带宽，mbps
    21300 left arrow 17000
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2767 left arrow 2323

Samsung M471A1K43DB1-CTD 8GB RAM的比较

Crucial Technology CT8G4SFS632A.C4FE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

A-DATA Technology AO2P21FC4R1-BRFS 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Transcend Information JM3200HLE-32G 32GB
Transcend Information JM3200HLE-32G 32GB
内存RAM
Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3600C14-16GTZRA 16GB
G Skill Intl F4-3600C14-16GTZRA 16GB
内存RAM
Corsair CMSA4GX3M1A1333C9 4GB
Corsair CMSA4GX3M1A1333C9 4GB
G Skill Intl F4-3200C16-16GSXKB 16GB
G Skill Intl F4-3200C16-16GSXKB 16GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Corsair MK16GX44A2666C16 4GB
Corsair MK16GX44A2666C16 4GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Micron Technology 8ATF51264AZ-2G1AY 4GB
Micron Technology 8ATF51264AZ-2G1AY 4GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Teikon TMA851S6AFR6N-UHHC 4GB
Teikon TMA851S6AFR6N-UHHC 4GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT8G4DFRA266.C8FN 8GB
Crucial Technology CT8G4DFRA266.C8FN 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Kingston 9905633-017.A00G 8GB
Kingston 9905633-017.A00G 8GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston KV0M5R-HYD 8GB
Kingston KV0M5R-HYD 8GB
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
Crucial Technology BL8G30C15U4W.M8FE 8GB
Crucial Technology BL8G30C15U4W.M8FE 8GB
内存RAM
Kingston KHX1866C10D3/8GX 8GB
Kingston KHX1866C10D3/8GX 8GB
Crucial Technology CT16G4DFD8266.M16FR 16GB
Crucial Technology CT16G4DFD8266.M16FR 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905598-026.A00G 16GB
Kingston 9905598-026.A00G 16GB
内存RAM
Kingston ACR16D3LS1KNG/4G 4GB
Kingston ACR16D3LS1KNG/4G 4GB
G Skill Intl F4-3600C18-8GTZR 8GB
G Skill Intl F4-3600C18-8GTZR 8GB
内存RAM