RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
Samsung M471A2K43CB1-CRC 16GB
Samsung M471A5244CB0-CRC 4GB

Samsung M471A2K43CB1-CRC 16GB vs Samsung M471A5244CB0-CRC 4GB

总分
star star star star star
Samsung M471A2K43CB1-CRC 16GB

Samsung M471A2K43CB1-CRC 16GB

总分
star star star star star
Samsung M471A5244CB0-CRC 4GB

Samsung M471A5244CB0-CRC 4GB

差异 规格 评论

差异

Samsung M471A2K43CB1-CRC 16GB 需要考虑的原因
Samsung M471A2K43CB1-CRC 16GB
报告一个错误
Samsung M471A5244CB0-CRC 4GB 需要考虑的原因
Samsung M471A5244CB0-CRC 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 38
    左右 -3% 更低的延时
  • 更快的读取速度，GB/s
    14.4 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.4 left arrow 9.1
    测试中的平均数值

规格

完整的技术规格清单
Samsung M471A2K43CB1-CRC 16GB
Samsung M471A5244CB0-CRC 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 37
  • 读取速度，GB/s
    13.8 left arrow 14.4
  • 写入速度，GB/s
    9.1 left arrow 10.4
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2404 left arrow 2179

Samsung M471A2K43CB1-CRC 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Samsung M471A5244CB0-CRC 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB
SanMax Technologies Inc. SMD4-U8G48MB-24RX 8GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
Crucial Technology CT16G4DFRA32A.C8FE 16GB
Crucial Technology CT16G4DFRA32A.C8FE 16GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Corsair CMK8GX4M2A2133C13 4GB
Corsair CMK8GX4M2A2133C13 4GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMD16GX4M2B3866C18 8GB
Corsair CMD16GX4M2B3866C18 8GB
内存RAM
Kingston 9905471-071.A00LF 8GB
Kingston 9905471-071.A00LF 8GB
Apacer Technology 78.C2GFL.C720B 8GB
Apacer Technology 78.C2GFL.C720B 8GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Mushkin MR[A/B]4U280HHHH8G 8GB
Mushkin MR[A/B]4U280HHHH8G 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-3600C18-32GTRG 32GB
G Skill Intl F4-3600C18-32GTRG 32GB
内存RAM
Kingston 9905469-143.A00LF 4GB
Kingston 9905469-143.A00LF 4GB
G Skill Intl F4-3000C14-16GTZR 16GB
G Skill Intl F4-3000C14-16GTZR 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3600C18-8GTZN 8GB
G Skill Intl F4-3600C18-8GTZN 8GB
内存RAM
Kingston KHX1600C10D3/8G 8GB
Kingston KHX1600C10D3/8G 8GB
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CMK16GX4M4A2133C13 4GB
Corsair CMK16GX4M4A2133C13 4GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N-UH 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6CJR6N
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology CT16G4SFRA266.C8FE 16GB
Crucial Technology CT16G4SFRA266.C8FE 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Kingston LV32D4U2S8HD-8X 8GB
Kingston LV32D4U2S8HD-8X 8GB
内存RAM