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Samsung M471B5173QH0-YK0 4GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
比较
Samsung M471B5173QH0-YK0 4GB vs Crucial Technology BLS16G4S26BFSD.16FBD 16GB
总分
Samsung M471B5173QH0-YK0 4GB
总分
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M471B5173QH0-YK0 4GB
报告一个错误
需要考虑的原因
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
报告一个错误
低于PassMark测试中的延时,ns
34
45
左右 -32% 更低的延时
更快的读取速度,GB/s
14.5
12.3
测试中的平均数值
更快的写入速度,GB/s
9.6
8.0
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Samsung M471B5173QH0-YK0 4GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
45
34
读取速度,GB/s
12.3
14.5
写入速度,GB/s
8.0
9.6
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
1992
2576
Samsung M471B5173QH0-YK0 4GB RAM的比较
Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB
Crucial Technology BLS16G4S26BFSD.16FBD 16GB RAM的比较
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston 9905403-061.A00LF 2GB
Kingston 9965589-031.D01G 2GB
SK Hynix HYMP112U64CP8-S6 1GB
Crucial Technology CT4G4DFS8213.C8FBD2 4GB
G Skill Intl F3-2666C12-8GTXD 8GB
Corsair CMK32GX4M4D3600C18 8GB
Kingston KVR533D2N4 512MB
Essencore Limited KD48GU880-36A180Z 8GB
G Skill Intl F3-2666C12-8GTXD 8GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
Kingston 9905403-156.A00LF 2GB
Corsair CMK32GX4M2B3200C16 16GB
Kingston 9965433-406.A00LF 8GB
Team Group Inc. 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Transcend Information JM3200HLE-16G 16GB
Corsair VS2GB1333D4 2GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
Kingston 9905458-017.A01LF 4GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Patriot Memory (PDP Systems) PSD48G266681 8GB
Samsung 1600 CL10 Series 8GB
Corsair CMW16GX4M2Z4600C18 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Micron Technology 8ATF51264HZ-2G1B1 4GB
报告一个错误
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Bug description
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