Samsung M471B5173QH0-YK0 4GB vs G Skill Intl F4-3200C14-16GTZR 16GB

总分

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分

G Skill Intl F4-3200C14-16GTZR 16GB

G Skill Intl F4-3200C14-16GTZR 16GB

差异规格评论

差异

Samsung M471B5173QH0-YK0 4GB

需要考虑的原因
Samsung M471B5173QH0-YK0 4GB

报告一个错误

G Skill Intl F4-3200C14-16GTZR 16GB

需要考虑的原因
G Skill Intl F4-3200C14-16GTZR 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 45

左右 -73% 更低的延时
更快的读取速度，GB/s

19.1 12.3

测试中的平均数值
更快的写入速度，GB/s

15.9 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Samsung M471B5173QH0-YK0 4GB

G Skill Intl F4-3200C14-16GTZR 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

45 26
读取速度，GB/s

12.3 19.1
写入速度，GB/s

8.0 15.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1992 3876

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Elpida EBJ40EG8BFWB-JS-F 4GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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V-Color Technology Inc. TL48G32S8KSRGB16 8GB

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Hexon Technology Pte Ltd HEXON 1GB

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Crucial Technology BL8G36C16U4B.M8FE1 8GB

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Nanya Technology M2F8G64CB8HB5N-DI 8GB

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Apacer Technology 78.01GA0.9K5 1GB

Apacer Technology 78.01GA0.9K5 1GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Kingston 99U5712-009.A00G 16GB

Kingston 99U5712-009.A00G 16GB

Samsung M471B5173QH0-YK0 4GB

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Patriot Memory (PDP Systems) PSD416G24002S 16GB

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Mushkin 996902 2GB

Mushkin 996902 2GB

Avant Technology J642GU42J5213N2 16GB

Avant Technology J642GU42J5213N2 16GB