Samsung M471B5273CH0-CF8 4GB vs AMD R534G1601U1S 4GB

总分

Samsung M471B5273CH0-CF8 4GB

Samsung M471B5273CH0-CF8 4GB

总分

AMD R534G1601U1S 4GB

AMD R534G1601U1S 4GB

差异规格评论

差异

Samsung M471B5273CH0-CF8 4GB

需要考虑的原因
Samsung M471B5273CH0-CF8 4GB

报告一个错误

低于PassMark测试中的延时，ns

31 68

左右 54% 更低的延时
更快的读取速度，GB/s

6.6 6.5

测试中的平均数值

AMD R534G1601U1S 4GB

需要考虑的原因
AMD R534G1601U1S 4GB

报告一个错误

更快的写入速度，GB/s

4.7 3.6

测试中的平均数值
更高的内存带宽，mbps

12800 8500

左右 1.51 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CF8 4GB

AMD R534G1601U1S 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

31 68
读取速度，GB/s

6.6 6.5
写入速度，GB/s

3.6 4.7
内存带宽，mbps

8500 12800

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
时序/时钟速度

7-7-7-20 / 1066 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

921 1209

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT51264BD1339.M16F 4GB

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G Skill Intl F5-6400J3239G16G 16GB

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A-DATA Technology AD4S3200316G22-BHYD 16GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

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Crucial Technology BL32G32C16U4B.M16FB1 32GB

Kingston KHX2400C11D3/4GX 4GB

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Kingston HX316C10F/8 8GB

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G Skill Intl F4-3200C14-16GTZKY 16GB