Samsung M471B5273CH0-CH9 4GB vs Corsair MK16GX44B3000C15 4GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

Corsair MK16GX44B3000C15 4GB

Corsair MK16GX44B3000C15 4GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

Corsair MK16GX44B3000C15 4GB

需要考虑的原因
Corsair MK16GX44B3000C15 4GB

报告一个错误

低于PassMark测试中的延时，ns

21 48

左右 -129% 更低的延时
更快的读取速度，GB/s

16.1 8.9

测试中的平均数值
更快的写入速度，GB/s

13.5 5.9

测试中的平均数值
更高的内存带宽，mbps

16000 10600

左右 1.51 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

Corsair MK16GX44B3000C15 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 21
读取速度，GB/s

8.9 16.1
写入速度，GB/s

5.9 13.5
内存带宽，mbps

10600 16000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-16000, 1.2V, TBD1 V, TBD2 V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz no data
排名PassMark (越多越好)

1420 3435

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMAA4GU6MJR8N-VK 32GB

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