Samsung M471B5673FH0-CF8 2GB vs A-DATA Technology AO2P32NCSV1-BEVS 16GB

总分

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分

A-DATA Technology AO2P32NCSV1-BEVS 16GB

A-DATA Technology AO2P32NCSV1-BEVS 16GB

差异规格评论

差异

Samsung M471B5673FH0-CF8 2GB

需要考虑的原因
Samsung M471B5673FH0-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

30 39

左右 23% 更低的延时

A-DATA Technology AO2P32NCSV1-BEVS 16GB

需要考虑的原因
A-DATA Technology AO2P32NCSV1-BEVS 16GB

报告一个错误

更快的读取速度，GB/s

17.5 10.6

测试中的平均数值
更快的写入速度，GB/s

9.1 6.8

测试中的平均数值
更高的内存带宽，mbps

25600 8500

左右 3.01 更高的带宽

规格

完整的技术规格清单

Samsung M471B5673FH0-CF8 2GB

A-DATA Technology AO2P32NCSV1-BEVS 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

30 39
读取速度，GB/s

10.6 17.5
写入速度，GB/s

6.8 9.1
内存带宽，mbps

8500 25600

Other

描述

PC3-8500, 1.5V, CAS Supported: 5 6 7 8 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 22 24
时序/时钟速度

7-7-7-20 / 1066 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1479 2852

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Gloway International (HK) STK4U2400D15082C 8GB

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SK Hynix HMA851S6CJR6N-UH 4GB

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