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Samsung M471B5673FH0-CF8 2GB
Kingston HP32D4U2S1ME-8 8GB

Samsung M471B5673FH0-CF8 2GB vs Kingston HP32D4U2S1ME-8 8GB

总分
star star star star star
Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

总分
star star star star star
Kingston HP32D4U2S1ME-8 8GB

Kingston HP32D4U2S1ME-8 8GB

差异 规格 评论

差异

Samsung M471B5673FH0-CF8 2GB 需要考虑的原因
Samsung M471B5673FH0-CF8 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 35
    左右 14% 更低的延时
Kingston HP32D4U2S1ME-8 8GB 需要考虑的原因
Kingston HP32D4U2S1ME-8 8GB
报告一个错误
  • 更快的读取速度，GB/s
    18.6 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.9 left arrow 6.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 8500
    左右 3.01 更高的带宽

规格

完整的技术规格清单
Samsung M471B5673FH0-CF8 2GB
Kingston HP32D4U2S1ME-8 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    30 left arrow 35
  • 读取速度，GB/s
    10.6 left arrow 18.6
  • 写入速度，GB/s
    6.8 left arrow 11.9
  • 内存带宽，mbps
    8500 left arrow 25600
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 5 6 7 8 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1479 left arrow 3029

Samsung M471B5673FH0-CF8 2GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMT112U6TFR8C-H9 1GB

Kingston HP32D4U2S1ME-8 8GB RAM的比较

Samsung M393B2G70BH0-CK0 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston 9905625-139.A00G 16GB
Kingston 9905625-139.A00G 16GB
内存RAM
Samsung M471B5673FH0-CF8 2GB
Samsung M471B5673FH0-CF8 2GB
Kingston HP32D4U2S1ME-8 8GB
Kingston HP32D4U2S1ME-8 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Essencore Limited KD4AGU880-32A160U 16GB
Essencore Limited KD4AGU880-32A160U 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Kingston HP26D4S9S1ME-4 4GB
Kingston HP26D4S9S1ME-4 4GB
内存RAM
Kingston 9905702-010.A00G 8GB
Kingston 9905702-010.A00G 8GB
SK Hynix MMA82GS6CJR8N-VK 16GB
SK Hynix MMA82GS6CJR8N-VK 16GB
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Crucial Technology CT16G4DFD832A.C16FN 16GB
Crucial Technology CT16G4DFD832A.C16FN 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Avant Technology W6451U66J5213ND 4GB
Avant Technology W6451U66J5213ND 4GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Kingston XRGM6C-MIB 16GB
Kingston XRGM6C-MIB 16GB
内存RAM
Kingston 9905403-515.A00LF 8GB
Kingston 9905403-515.A00LF 8GB
Shenzen Recadata Storage Technology 8GB
Shenzen Recadata Storage Technology 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
G Skill Intl F4-3600C19-8GSXWB 8GB
G Skill Intl F4-3600C19-8GSXWB 8GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB
内存RAM
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
G Skill Intl F4-3333C16-16GTZB 16GB
G Skill Intl F4-3333C16-16GTZB 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Samsung M393A2K40BB2-CTD 16GB
Samsung M393A2K40BB2-CTD 16GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Corsair CMK4GX4M1A2400C16 4GB
Corsair CMK4GX4M1A2400C16 4GB
内存RAM