SK Hynix DDR2 800 2G 2GB vs Kingston ASU21D4U5S8MB-8 8GB

总分

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

总分

Kingston ASU21D4U5S8MB-8 8GB

Kingston ASU21D4U5S8MB-8 8GB

差异规格评论

差异

SK Hynix DDR2 800 2G 2GB

需要考虑的原因
SK Hynix DDR2 800 2G 2GB

报告一个错误

更快的读取速度，GB/s

2 16.3

测试中的平均数值

Kingston ASU21D4U5S8MB-8 8GB

需要考虑的原因
Kingston ASU21D4U5S8MB-8 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 77

左右 -157% 更低的延时
更快的写入速度，GB/s

11.4 1,884.0

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

SK Hynix DDR2 800 2G 2GB

Kingston ASU21D4U5S8MB-8 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 30
读取速度，GB/s

2,936.9 16.3
写入速度，GB/s

1,884.0 11.4
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

564 2953

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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A-DATA Technology VDQVE1B16 2GB

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G Skill Intl F4-2666C15-4GVR 4GB

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SK Hynix HYMP112U64CP8-S5 1GB

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TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

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Crucial Technology BL16G32C16U4BL.M16FE 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Corsair CMK32GX4M2F4000C19 16GB

Corsair CMK32GX4M2F4000C19 16GB

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G Skill Intl F4-3333C16-8GTZB 8GB

G Skill Intl F4-3200C16-8GTZB 8GB

G Skill Intl F4-3200C16-8GTZB 8GB

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Kingston 9905458-017.A01LF 4GB

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Kingston 99U5711-001.A00G 4GB

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Samsung M393B5270CH0-CH9 4GB

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Kingston 9905744-066.A00G 32GB