SK Hynix HMT151R7TFR4C-H9 4GB vs Kingston 9965589-008.D02G 8GB

总分

SK Hynix HMT151R7TFR4C-H9 4GB

SK Hynix HMT151R7TFR4C-H9 4GB

总分

Kingston 9965589-008.D02G 8GB

Kingston 9965589-008.D02G 8GB

差异规格评论

差异

SK Hynix HMT151R7TFR4C-H9 4GB

需要考虑的原因
SK Hynix HMT151R7TFR4C-H9 4GB

报告一个错误

更快的读取速度，GB/s

10.1 9.7

测试中的平均数值

Kingston 9965589-008.D02G 8GB

需要考虑的原因
Kingston 9965589-008.D02G 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 48

左右 -33% 更低的延时
更快的写入速度，GB/s

7.3 7.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

SK Hynix HMT151R7TFR4C-H9 4GB

Kingston 9965589-008.D02G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 36
读取速度，GB/s

10.1 9.7
写入速度，GB/s

7.0 7.3
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1955 1789

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HMT41GU7BFR8A-PB 8GB

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Crucial Technology CT16G4DFRA266.C16FP 16GB

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Samsung 1600 CL10 Series 8GB

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G Skill Intl F4-2133C15-4GRR 4GB

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Samsung M393B2G70BH0-CK0 16GB

Corsair CMD64GX4M8B2800C14 8GB

Corsair CMD64GX4M8B2800C14 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Crucial Technology BLS8G4D240FSA.M16FAD 8GB

Crucial Technology BLS8G4D240FSA.M16FAD 8GB

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB

Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB